Ultra-Thin Diamond Wire for Silicon Wafer Slicing

• Customization: Available
• Application: Concrete
• Type: Electroplating
• Model NO.: WS006
• Wire Diameter: 40–70 μm (±1μm Tolerance)
• Diamond Grit: 3–8 μm Monocrystalline (ISO 6106 Graded)
• Tensile Strength: >6.0 Gpa (Carbon Steel Core)
• Cutting Life: 350–550 M/Wafer (156mm)
• Surface Roughness: Ra <0.2 μm (as-Cut)
• Bow/Warp: <15 μm (Per 300mm Wafer)
• Transport Package: Wooden Box
• Specification: Diamond Beads
• Trademark: HT
• Origin: China
• HS Code: 8464102000
• Production Capacity: 20sets/Month

Product Description

Ultra-Thin Diamond Wire for Silicon Wafer Slicing

Redefining wafer slicing economics, this China-manufactured diamond wire delivers sub-50μm kerf losses and zero crystal damage for monocrystalline silicon ingots. Engineered to replace slurry-based saws, it enables thinner wafers (120–160μm), higher yields, and zero hazardous waste.

Specification

Wire Types: Electroplated (40–55μm) / Resin Bonded (60–70μm)

Diamond Density: 80–220 grits/mm (adjustable)

Line Speed: 15–25 m/s (servo-controlled)

Tension Control: 18–25 N with ±0.2N stability

Coolant: Water-based (neutral pH)

Compatibility: 5–12″ ingots, n/p-type silicon, SiC

Working Principle

"Monocrystalline diamond grit fractures silicon crystals via brittle-mode micro-fracturing along crystallographic planes using high-tension steel wire."

Breakdown:

Core Physics: Brittle-mode fracture (not plastic deformation)
Cutting Edge: Monocrystalline diamond grit (3-8μm)
Mechanism: Crystallographic plane cleavage (111 planes in Si)
Execution: High-tension (18-25N) steel wire at 15-25m/s
Validation: SEMI MF1832 wafer standards | ASME B74.20 abrasives classification

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Product Applications

1. Photovoltaic Ingot Slicing: Produce 182mm/210mm solar wafers at <120μm thickness.

2. Semiconductor Wafers: Precision slicing of 200mm/300mm Si and SiC boules.

3. LED Substrates: Sapphire/GaN wafer dicing with <20μm chipping.

4. Advanced R&D: Cutting 2D materials (graphene, TMDCs) for quantum devices.

5. Recycling: Reclaim silicon from end-of-life PV panels.

Product Advantages

1. Slash Kerf Loss: 42μm wires extract 22% more wafers/ingot vs. 180μm slurry saws.

2.Eliminate Sludge: Dry-cutting capable – saves $500K/year in waste treatment.

3. Nano-Precision: <0.15μm Ra surface finish – reduces polishing costs by 40%.

4. Speed Dominance: Cut 300mm wafers at 650mm/min (2.1× slurry saws).

5. China Cost Scaling: 30% lower $/meter than Japanese competitors (DISCO, Nakayama).

Company Profile

HUATAO GROUP

HUATAO GROUP is a leading Chinese manufacturer of mining equipment with over 20 years of expertise. Certified with ISO 9001, CE, and GOST, we export to 50+ countries, offering reliable machinery backed by R&D innovation and strict quality control.

Quality Assurance

Our diamond wire saws are manufactured in accordance with strict quality control standards. Each product undergoes rigorous testing before leaving the factory to ensure its performance and reliability. We also provide a comprehensive after - sales service, including technical support, spare parts supply, and product maintenance, to ensure that our customers can use our products with confidence.